Growth of structured non-crystalline boron-oxygen-nitrogen films and measurement of their electrical properties

Chinese Physics Letters

Volumn 20, Issue 3, 2003, Pages 414-416

  Chen, Guang Chao ^a   Lu, Fan Xiu ^a   Boo, J H ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; BORON; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; ELECTRONS; INTERFACES (MATERIALS); NITROGEN; NITROGEN PLASMA; ORGANIC CHEMICALS; ORGANOMETALLICS; OXYGEN; SILICON WAFERS; TEMPERATURE;

AMORPHOUS BORON; BORON-OXYGEN; CHEMICAL VAPOR DEPOSITION METHODS; FILM STRUCTURE; HOMOGENEOUS FILMS; LOWER FREQUENCIES; MEASUREMENTS OF; PLASMA ENHANCED METAL ORGANIC CHEMICAL VAPOR DEPOSITIONS; RF PLASMA; SI WAFER;

BINDING ENERGY;

EID: 0037352641     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/3/329     Document Type: Article

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