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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 2, 1997, Pages 805-812

Oxynitridation of silicon using helicon-wave excited and inductively-coupled nitrogen plasma

(3) Okamoto, Yoshinaga a Kimura, Shinjiro a Ikoma, Hideaki a

Author keywords

C V characteristics; Dielectric constant; Fowler Nordheim tunneling current; Helicon wave; Inductively coupled plasma; Oxynitridation; Plasma; Si2N2O; Silicon

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTICS; FOWLER NORDHEIM TUNNELING CURRENT; HELICON WAVES; INDUCTIVELY COUPLED PLASMAS; OXYNITRIDATION; SILICON OXYNITRIDE;

ANNEALING; CAPACITANCE MEASUREMENT; FILM GROWTH; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; PLASMAS; SILICA; STOICHIOMETRY; VOLTAGE MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON NITRIDE;

EID: 0031069466 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.805 Document Type: Article

Times cited : (13)

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