Impact of tunnel film oxynitridation on band-to-band tunneling current and electron injection in flash memory

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1351-1354

  Arakawa, Tomiyuki ^a   Matsumoto, Ryoichi ^a   Hayashi, Takahisa ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

Band to band tunneling; Flash memory; Fowler Nordheim tunneling; Nitrogen distribution; Reliability; Silicon oxynitride

Indexed keywords

EID: 0344727583     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1351     Document Type: Article

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