Electrical isolation of n-type GaAs layers by proton bombardment: Effects of the irradiation temperature

Journal of Applied Physics

Volumn 84, Issue 9, 1998, Pages 4757-4760

  De Souza, J P ^a   Danilov, I ^a   Boudinov, H ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012673416     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368817     Document Type: Article

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