Growth of the single-crystalline ZnO films on Si (111) substrates by plasma-assisted molecular-beam epitaxy

Materials Research Society Symposium - Proceedings

Volumn 692, Issue , 2002, Pages 655-660

  Koike, Kazuto ^a   Tanite, Takanori ^a   Sasa, Shigehiko ^a   Inoue, Masataka ^a   Yano, Mitsuaki ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; FILM GROWTH; METALLIC FILMS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SUBSTRATES; TWINNING; ULTRAVIOLET RADIATION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

ULTRAVIOLET PHOTOLUMINESCENCE;

SINGLE CRYSTALS;

EID: 0036056085     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)