Photoluminescence of InGaN/GaN multiple quantum wells originating from complete phase separation

Journal of Applied Physics

Volumn 93, Issue 5, 2003, Pages 2507-2509

  Chen, P ^a   Chua, S J ^a   Miao, Z L ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPECTRUM ANALYSIS; SUBSTRATES;

MULTIPLE QUANTUM WELLS (MQWS);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037347988     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1540738     Document Type: Article

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