Formation of uniform 10-nm-scale InGaN quantum dots by selective MOCVD growth and their micro-photoluminescence intensity images

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 576-580

  Tachibana, K ^a   Someya, T ^a   Ishida, S ^a   Arakawa, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

INDIUM GALLIUM NITRIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034512735     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00781-8     Document Type: Article

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