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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4283, Issue 1, 2001, Pages 36-45

Microscopic modeling of GaInNAs semiconductor lasers

(5) Hader, Jörg a Moloney, Jerome V a O’Reilly, Eoin P b Hofmann, Martin R c Koch, Stephan W c

a UNIVERSITY OF ARIZONA (United States)

b UNIVERSITY OF SURREY (United Kingdom)

c PHILIPPS UNIVERSITY MARBURG (Germany)

Author keywords

Absorption; Carrier capture time; Gain; GaInNAs; InGaAlAs; InGaAsP; Linewidth enhancement factor; Semiconductor laser

Indexed keywords

CHARGE CARRIERS; ELECTRON TRANSITIONS; MATHEMATICAL MODELS; MICROSCOPIC EXAMINATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

TRANSITION ENERGIES;

QUANTUM WELL LASERS;

EID: 0034784243 PISSN: 0277786X EISSN: None Source Type: Journal
DOI: 10.1117/12.432581 Document Type: Article

Times cited : (5)

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