메뉴 건너뛰기




Volumn 93, Issue 3, 2003, Pages 1505-1510

Recalescence after bulk solidification in germanium films melted by ns laser pulses

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ENTHALPY; LASER PULSES; MAGNETRON SPUTTERING; RAPID SOLIDIFICATION; SEMICONDUCTING GERMANIUM;

EID: 0037323169     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1534374     Document Type: Article
Times cited : (4)

References (33)
  • 21
    • 0013322137 scopus 로고    scopus 로고
    • note
    • The reflectivity changes are measured as deviations from the initial reflectivity of the film. As a consequence, the reflectivity of the solid material at the melting temperature Rs(Tm) depends on the film thickness, being about 10%-14% above the initial reflectivity of the film (see Refs. 15 and 17). A "reference" value of Rs(Tm) = 12% has been included in the figures.
  • 23
    • 0013286840 scopus 로고    scopus 로고
    • note
    • 2 (see Ref. 7).
  • 32
    • 0013276844 scopus 로고    scopus 로고
    • note
    • The linear absorption coefficient is defined as α = 4 πκ/λ
  • 33
    • 0013316608 scopus 로고    scopus 로고
    • note
    • o the laser intensity that strikes the sample surface.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.