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Volumn 89, Issue 7, 2001, Pages 3642-3649

Evidence for surface initiated solidification in Ge films upon picosecond laser pulse irradiation

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Indexed keywords


EID: 0035308018     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1347958     Document Type: Article
Times cited : (13)

References (36)
  • 19
    • 22144440856 scopus 로고
    • Ph.D. thesis, Dept. of Physics, University of Konstanz, Germany
    • J. Boneberg, Ph.D. thesis, Dept. of Physics, University of Konstanz, Germany, 1993.
    • (1993)
    • Boneberg, J.1
  • 33
    • 22144447082 scopus 로고    scopus 로고
    • Although the RTR transients of the 50 nm film obtained with ns resolution shown in Fig. 1 suggest the occurrence of an interfacial solidification process towards the surface for all the fluences studied, recent RTR measurements with ps resolution on the same film have revealed the occurrence of surface initiated solidification at high fluences (Refs. 22 and 23). The ns temporal resolution of the technique used in the present work is not sufficient to resolve the ultrafast reflectivity oscillations occurring in a 50 nm thick film whereas they can easily be resolved for thicker films, as seen in Fig. 1
    • Although the RTR transients of the 50 nm film obtained with ns resolution shown in Fig. 1 suggest the occurrence of an interfacial solidification process towards the surface for all the fluences studied, recent RTR measurements with ps resolution on the same film have revealed the occurrence of surface initiated solidification at high fluences (Refs. 22 and 23). The ns temporal resolution of the technique used in the present work is not sufficient to resolve the ultrafast reflectivity oscillations occurring in a 50 nm thick film whereas they can easily be resolved for thicker films, as seen in Fig. 1.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.