Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices

Microelectronics Reliability

Volumn 41, Issue 7, 2001, Pages 1085-1088

  Strobel, S ^a,b   Bauer, A J ^b   Beichele, M ^b   Ryssel, H ^a,b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INTERDIFFUSION (SOLIDS); ION IMPLANTATION; MICROELECTRODES; NITROGEN; POLYSILICON; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING FILMS; SUBSTRATES; ULTRATHIN FILMS;

GATE ELECTRODES;

MOS DEVICES;

EID: 0035394696     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00072-5     Document Type: Article

References (4)