Features of metal-insulator-semiconductor diodes with tunnel insulator subjected to UV soaking

Thin Solid Films

Volumn 346, Issue 1, 1999, Pages 226-229

  Kilchitskaya, S S ^a   Kilchitskaya, T S ^a   Popova, G D ^a   Skryshevsky, V A ^a  

^a TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONIC DENSITY OF STATES; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); MIS DEVICES; ULTRAVIOLET RADIATION;

INTERFACE RECONSTRUCTION; ULTRAVIOLET SOAKING;

SEMICONDUCTOR DIODES;

EID: 0033149421     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01768-4     Document Type: Article

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