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Volumn 143, Issue 4, 1996, Pages 248-251

Intensity modulated photoeffects in InP-MIS capacitors

Author keywords

InP MIS capacitor; Photosensitivity; Semiconductor

Indexed keywords

CHARGE CARRIERS; FREQUENCY MODULATION; MIS DEVICES; OSCILLATORS (ELECTRONIC); PHOTOSENSITIVITY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON;

EID: 0030206251     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:19960389     Document Type: Article
Times cited : (4)

References (11)
  • 1
    • 84918112071 scopus 로고
    • Influence of illumination on MIS capacitances in the strong inversion region
    • GROSVALET, J., and JUND, C.: 'Influence of illumination on MIS capacitances in the strong inversion region', IEEE Trans. Electron Devices, 1967, ED-14, pp. 777-780
    • (1967) IEEE Trans. Electron Devices , vol.ED-14 , pp. 777-780
    • Grosvalet, J.1    Jund, C.2
  • 4
    • 0027677702 scopus 로고
    • Optoelectronics charge coupled devices (OECCDs) using InP capacitor
    • PAL, B.B., and NELSON, S.S.: 'Optoelectronics charge coupled devices (OECCDs) using InP capacitor', IEEE Trans. Electron Devices, 1993, ED-40, pp. 1878-1880
    • (1993) IEEE Trans. Electron Devices , vol.ED-40 , pp. 1878-1880
    • Pal, B.B.1    Nelson, S.S.2
  • 5
  • 7
    • 0019923311 scopus 로고
    • Optically-gated InP-MISFET: A new high-gain optical detector
    • YAMAGUCHI, E., and KOBAYASHI, T.: 'Optically-gated InP-MISFET: A new high-gain optical detector', Jpn. J. Appl. Phys., 1982, 21, pp. 104-108
    • (1982) Jpn. J. Appl. Phys. , vol.21 , pp. 104-108
    • Yamaguchi, E.1    Kobayashi, T.2
  • 9
    • 0028465527 scopus 로고
    • Optical characterization of diamond MIS capacitors
    • MARCHYWKA, M., and MOSES, D.: 'Optical characterization of diamond MIS capacitors', IEEE Trans. Electron Devices, 1994, ED-41, pp. 1265-1272
    • (1994) IEEE Trans. Electron Devices , vol.ED-41 , pp. 1265-1272
    • Marchywka, M.1    Moses, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.