Quantum confined Stark effect in GaInNAs/GaAs multiple quantum wells

IEE Proceedings: Optoelectronics

Volumn 150, Issue 1, 2003, Pages 92-95

  Heroux J B ^a   Yang, X ^a   Wang, W I ^a  

^a Columbia University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; ENERGY GAP; EXCITONS; LIGHT POLARIZATION; MATRIX ALGEBRA; OPTOELECTRONIC DEVICES; QUENCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS;

CONDUCTION BAND; ELECTROREFLECTANCE SPECTROSCOPY; GALLIUM INDIUM NITROGEN ARSENIDE; QUANTUM CONFINED STARK EFFECT; STARK SHIFT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037306037     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20030042     Document Type: Article

References (19)

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