Carrier mobility in inversion layers of Si-thin Ta2O5 structures

Microelectronics Reliability

Volumn 38, Issue 5, 1998, Pages 833-837

  Atanassova, E ^a   Dimitrova, T ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; MOSFET DEVICES; PERMITTIVITY; SEMICONDUCTING SILICON; SPUTTERING; TANTALUM COMPOUNDS; THIN FILM CIRCUITS;

INVERSION CHANNELS;

SEMICONDUCTING FILMS;

EID: 0032064922     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00014-6     Document Type: Article

References (11)

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