Tertiarybutylarsine for metalorganic chemical vapor deposition growth of high purity, high uniformity films

Journal of Electronic Materials

Volumn 26, Issue 1, 1997, Pages 37-42

  Chui, H C ^a,c   Biefeld, R M ^a   Hammons, B E ^a   Breiland, W G ^a   Brennan, T M ^a   Jones, E D ^a   Moffat, H K ^a   Kim, M H ^b   Grodzinski, P ^b   Chang, K H ^b   Lee, H C ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b MOTOROLA INC   (United States)

^c HEWLETT PACKARD COMPANY   (United States)

Author keywords

AlGaas; GaAs; InGaAs; Low p type carrier concentration; Tertiarybutylarsine (TBA)

Indexed keywords

EID: 0012135230     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0131-7     Document Type: Article

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