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Applied Physics Letters

Volumn 72, Issue 9, 1998, Pages 1075-1077

Direct and inverse equivalent InAlAs-InP interfaces grown by gas-source molecular beam epitaxy

(3) Vignaud, D a Wallart, X b Mollot, F b

a CNRS (France)

b INSTITUT D ELECTRONIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000533083 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.120969 Document Type: Article

Times cited : (15)

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