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Applied Physics Letters

Volumn 70, Issue 24, 1997, Pages 3257-3259

Type II recombination and band offset determination in a tensile strained InGaAs quantum well

(7) Lugand, C a Benyattou, T a Guillot, G a Venet, T b Gendry, M b Hollinger, G b Sermage, B c

a UNIVERSITÉ DE LYON (France)

b ECOLE CENTRALE DE LYON (France)

c ORANGE LABS (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001223980 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.119140 Document Type: Article

Times cited : (10)

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