Chemical beam etching of GaAs using a novel precursor of tertiarybutylchloride (TBCl)

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 6 A/B, 1999, Pages

  Kondow, Masahiko ^a   Shi, Binqiang ^a   Tu, Charles W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; CHLORINE COMPOUNDS; CORROSION RESISTANCE; ETCHING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; THERMODYNAMIC STABILITY;

CHEMICAL BEAM ETCHING; TERTIARYBUTYLCHLORIDE;

SEMICONDUCTING FILMS;

EID: 0032654883     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l617     Document Type: Article

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