Completely consistent ‘no-charge’ PHEMT model including DC/RF dispersion

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2002, Pages 2133-2136

  Wei, C J ^a   Tkachenko, Y A ^a   Gering, J ^a   Bartle, D ^a  

^a Alpha Industries Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; EQUIVALENT CIRCUITS;

CAPACITIVE CURRENTS; DRAIN CURRENTS; TRANS-CAPACITANCE ELEMENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036063478     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1012292     Document Type: Article

References (13)

1. A nonlinear GaAs FET model for use in design of output circuit of power amplifiers
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3. Chalmers nonlinear HEMT and MESFET model
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5. A new analytic model for power E-mode PHEMTs and its optimum power operation
6. Consistent small-signal and large-signal extraction techniques for heterojunction FETs
7. Novel experimentally-based modeling for MESFET’s having complex dispersion effects
8. Novel approach to a consistent large-signal and small-signal modeling of power PHEMTs
9. Mathematical approach to large-signal modeling of electronic devices
10. A frequency dispersion model of GaAs MESFET for large-signal applications
11. Modeling frequency dependence of output impedance of a microwave NESFET at low frequency
12. A scalable general-purpose model for microwave FET’s including the DC/AC dispersion effects
13. Alpha owned PHEMT model and its verification by load-pull and waveform measurements