S-Parameter measurement based quasistatic large-signal cold HEMT model for resistive mixer design

International Journal of RF and Microwave Computer-Aided Engineering

Volumn 6, Issue 4, 1996, Pages 250-258

  Schreurs, Dominique M M P ^a,c   Baeyens, Yves ^a,c   Nauwelaers, Bart K J C ^a   De Raedt, Walter ^a,b,c,d,e   Van Hove, Marleen ^b   Van Rossum, Marc ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

^c Catholic University of Leuven ^*

^d ESAT Laboratory

^e Electron Beam Technology

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; INTEGRATED CIRCUIT LAYOUT; MICROWAVE DEVICES; MIXER CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICE MODELS;

LARGE SIGNAL COLD MODEL; RESISTIVE MIXER DESIGN; S PARAMETER MEASUREMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 8444245256     PISSN: 10964290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

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