Observation of Substrate-Type Inversion in High-Resistivity Silicon Structures Irradiated With High-Energy Electrons

IEEE Transactions on Nuclear Science

Volumn 50, Issue 1, 2003, Pages 219-225

  Bosisio, L ^a   Dittongo, S ^a   Quai, E ^b   Rachevskaia, I ^c  

^a SEZIONE DI TRIESTE   (Italy)

^b UNIVERSITY OF TRIESTE   (Italy)

^c Divisione Microsistemi   (Italy)

Author keywords

Electron radiation effects; radiation hardening; semiconductor device radiation effects; silicon

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRON BEAMS; IRRADIATION; LEAKAGE CURRENTS; MICROSTRIP DEVICES; RADIATION HARDENING; SEMICONDUCTOR DEVICES; SURFACES;

BULK-TYPE INVERSION; HIGH-ENERGY ELECTRONS;

RADIATION DAMAGE;

EID: 0037291040     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.2002.807861     Document Type: Article

References (17)

1. R. Wunstorf, “Radiation hardness of silicon detectors: Current status,” IEEE Trans. Nucl. Sci., vol. 44, pp. 806-814, June 1997.
2. G. Lindstrom et al., “Radiation hard silicon detectors-developments by the RD48 (ROSE) collaboration,” Nucl. Instrum. Methods, vol. A466, pp. 308-326, 2001.
3. S. J. Taylor, M. Yamaguchi, M. J. Yang, M. Imaizumi, S. Matsuda, O. Kawasaki, and T. Hisamatsu, “Type conversion in irradiated silicon diodes,” Appl. Phys. Lett., vol. 70, no. 16, pp. 2165-2167, 1997.
4. B. Dezillie, Z. Lie, V. Eremin, W. Chen, and L. J. Zhao, “The effect of oxygen impurities on radiation hardness of FZ silicon detectors for HEP after neutron, proton and gamma irradiation,” IEEE Trans. Nucl. Sci., vol. 47, pp. 1892-1897, Dec. 2000.
5. J. A. Lauber, S. Gascon-Shotkin, R. G. Kellogg, and G. R. Martinez, “Energy dependence of damage to Si PIN diodes exposed to radiation,” Nucl. Instrum. Methods, vol. A396, pp. 165-171, 1997.
6. G.Verzellesi, G. F. Dalla Betta, L. Bosisio, M. Boscardin, G. U. Pignatel, and G. Soncini, “On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes,” IEEE Trans. Electron Devices, vol. 46, pp. 817-820, Apr. 1999.
7. “Review of particle physics,” Eur. Phys. J., vol. C15, pp. 80-81, 2000.
8. R. Wunstorf, “Systematische Untersuchungen zur Strahlenresistenz von Si-Detektoren für die Verwendung in Hochenergie-Experimenten,” Ph.D. dissertation, Univ. Hamburg, Hamburg, Germany, 1992.
9. D. Pitzl et al., “Type inversion in silicon detectors,” Nucl. Instrum. Methods, vol. A311, pp. 98-104, 1992.
10. G. P. Summers, E. A. Burke, P. Shapiro, S. R. Messenger, and R. J. Walters, “Damage correlations in semiconductors exposed to gamma, electron and proton radiations,” IEEE Trans. Nucl. Sci., vol. 40, pp. 1372-1378, Dec. 1993.
11. M. Huhtinen and P. A. Aarnio, “Pion induced displacement damage in silicon devices,” Nucl. Instrum. Methods, vol. A335, pp. 580-582, 1993.
12. A. Konobeyev, “Neutron displacement cross-sections for structural materials below 800 MeV,” J. Nucl. Mater., vol. 186, p. 117, 1992.
13. A. Vasilescu and G. Lindstrom, “Notes on the Fluence Normalization Based on the NIEL Scaling Hypothesis,”,ROSE/TN/2000-02, 2000.
14. M. Moll, E. Fretwurst, and G. Lindstrom, “Investigation on the improved radiation harness of silicon detectors with high oxygen concentration,” Nucl. Instrum. Methods, vol. A439, pp. 282-292, 2000.
15. 2 interface with respect to surface effects of silicon detectors,” Nucl. Instrum. Methods, vol. A444, pp. 605-613, 2000.
16. G. Lutz, “A simplistic model for reverse annealing in irradiated silicon,” Nucl. Instrum. Methods, vol. B95, pp. 41-49, 1995.
17. G. Lutz, Semiconductor Radiation Detectors. Berlin, Germany:Springer-Verlag, 1999, sec. 11.4.