On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes

IEEE Transactions on Electron Devices

Volumn 46, Issue 4, 1999, Pages 817-820

  Verzellesi, G ^a   Dalla Betta, G F ^b   Bosisio, L ^b   Boscardin, M ^c   Pignate, G U ^c   Soncini, G ^a  

^a UNIVERSITY OF TRENTO   (Italy)

^b ITC IRST   (Italy)

^c SEZIONE DI TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; MOS CAPACITORS; SEMICONDUCTOR DIODES; VELOCITY; X RAY SPECTROSCOPY;

BULK GENERATION LIFETIME; GATED DIODES; HIGH RESISTIVITY SILICON; SURFACE GENERATION VELOCITY;

SEMICONDUCTING SILICON;

EID: 0032628304     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.753724     Document Type: Article

References (8)

1. G. Vanstraelen, K. De Backker, I. Debusschere, C. Claeys, and G. Declerck, "Generation lifetime monitoring on high resistivity silicon using gated-diodes," Nucl. Instrum. Meth. Phys. Res. A, vol. 288, pp. 48-53, 1990.
2. D. K. Schröder, "Carrier lifetimes in silicon," IEEE Trans. Electron Devices, vol. 44, pp. 160-170, Jan. 1997.
3. A. S. Grove and D. J. Fitzgerald, "Surface effects on pn junction: Characteristics of surface space-charge regions under nonequilibrium conditions," Solid-State Electron., vol. 9, pp. 783-806, 1966.
4. D. K. Schröder, Semiconductor Material and Device Characterization. New York: Wiley, 1990, sec. 8.6.1.
5. G. F. Dalla Betta, G. U. Pignatel, G. Verzellesi, and M. Boscardin, "Si-PIN X-ray detector technology," Nucl. Instrum. Meth. Phys. Res. A, vol. 395, pp. 344-348, 1997.
6. D. K. Schröder, "Advanced MOS devices," in Modular Series on Solid State Devices, G. W. Neudeck and R. F. Pierret, Eds. Reading, MA: Addison-Wesley, 1987.
7. DESSIS Reference Manual, ISE Integrated Systems Engineering AG, Zurich, Switzerland, 1998.
8. Y. Murukami and T. Shingyouji, "Separation and analysis of diffusion and generation components of pn junction leakage current in various silicon wafers," J. Appl. Phys., vol. 75, no. 7, pp. 3548-3552, 1994.