Investigation of step-doped channel heterostructure field-effect transistor

IEE Proceedings: Circuits, Devices and Systems

Volumn 144, Issue 5, 1997, Pages 309-312

  Laih, L W ^a   Tsai, J H ^a   Wu, C Z ^a   Cheng, S Y ^a   Liu, W C ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Doped channel fets; Hfets

Indexed keywords

STEP DOPED CHANNEL (SDC);

CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); HETEROJUNCTIONS; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0031249554     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:19971479     Document Type: Article

References (11)

1. HIDA, H., OKAMOTO, A., TOYOSHIMA, H., and OHATA, K.: 'An investigation of i-AlGaAs/n-GaAs doped-channel MIS-like FETs (DMTs) - properties and performance potentialities', IEEE Trans., 1987, ED-34, p. 1448
2. KIEHI, R.A.: 'Single-interface and quantum-well heterostructure MISFETs', IEEE Trans., 1989, MTT-37, pp. 1304-1314
3. GREENBERG, D.R., DEL ALMO, J.A., KARBISON, J.P., and FLOREZ, L.T.: 'A pseudomorphic AlGaAs/n+-InGaAs metal-insulator-doped channel FET for broad-band, large-signal applications', IEEE Electron. Device Lett., 1991, 12, pp. 436-438
4. LAIH, L.W., TSAI, I.H., LIU, W.C., HSU, W.C., and LOUR, W.C.: 'Investigation of an InGaAs-GaAs doped-channel MIS-like pseudomorphic transistor', Solid-State Electron., 1995, 38, p. 1747
5. 0.8As heterostructure doped-channel FETs', IEEE Electron. Device Lett., 1995, 16, pp. 33-35
6. 0.48As single-quantum-well quasi-MISFET', IEEE Trans., 1987, ED-34, pp. 2221-2231
7. 0.85As/GaAs pseudomorphic single quantum well HEMT, IEEE Electron. Device Lett., 1985, 6, pp. 491-493
8. 0.62As pseudomorphic HEMTs'. IEEE IEDM Technical Digest, 1988, pp. 180-183
9. KIM, B., MATYI, R.J., WURTELE, M., and TSERNG, H.Q.: 'AlGaAs/InGaAs/GaAs quantum-well power MISFET at millimeter-wave frequencies', IEEE Electron. Device Lett., 1988, 9, pp. 610-612
10. ZIPPERIAN, T.E., DAWSON, L.R., DRUMMOND, T.J., SCHIRBER, J.E., and FRITZ, I.J.: 'GaAs/ (In, Ga)As, P-channel, multiple strained quantum well field-effect transistors with high transconductance and high peak saturated drain current', Appl. Phys. Lett., 1988, 52, pp. 975-977
11. SZE, M.: 'Physics of semiconductor devices' (Wiley, New York, 1981, 2nd edn.)