Photoresponse analysis and pixel shape optimization for CMOS active pixel sensors

IEEE Transactions on Electron Devices

Volumn 50, Issue 1, 2003, Pages 12-18

  Shcherback, Igor ^a   Yadid Pecht, Orly ^a  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

Active pixel sensor (APS); CMOS image sensor; Diffusion process; Modeling; Parameter estimation; Quantum efficiency

Indexed keywords

CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; INSTRUMENT CIRCUITS; LIGHT ABSORPTION; PARAMETER ESTIMATION; PHOTODIODES; QUANTUM EFFICIENCY; READOUT SYSTEMS; SUBSTRATES;

CMOS ACTIVE PIXEL SENSORS; PHOTOCARRIERS; PHOTORESPONSE ANALYSIS;

IMAGE SENSORS;

EID: 0037249285     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.806966     Document Type: Article

References (27)

1. E. R. Fossum, "CMOS image sensors: Electronic camera on a chip," IEEE Trans. Electron Devices, vol. 44, pp. 1689-1698, Oct. 1997.
2. O. Yadid-Pecht, B. Mansoorian, E. Fossum, and B. Pain, "Optimization of active pixel sensor noise and responsivity for scientific applications," Proc. SPIE, vol. 3019, pp. 125-136, Feb. 1997.
3. P. Magnan, A. Gautrand, Y. Degerli, C. Marques, F. Lavernhe, C. Cavadore, F. Corbiere, J. Farre, O. Saint-Pe, M. Tulet, and R. Davancens, "Influence of pixel topology on performances of CMOS APS imagers," Proc. SPIE, vol. 3965, 2000.
4. O. Yadid-Pecht, R. Ginosar, and Y. Shacham-Diamand, "A random access photodiode array for intelligent image capture," IEEE Trans. Electron Devices, vol. 38, pp. 1772-1781, Aug. 1991.
5. J. Hynecek, "BCMD-An improved photosite structure for high-density image sensors," IEEE Trans. Electron Devices, vol. 38, pp. 1011-1020, May 1991.
6. K. Matsumoto, I. Takayanagi, T. Nakamura, and R. Ohta, "The operation mechanism of a charge modulation device (CMD) image sensor," IEEE Trans. Electron Devices, vol. 38, pp. 989-998, May 1991.
7. S. Mendis, S. Kemeny, R. Gee, B. Pain, C. Staller, Q. Kim, and E. Fossum, "CMOS active pixel image sensors for highly integrated imaging systems," IEEE J. Solid-State Circuits, vol. 32, pp. 187-197, Feb. 1997.
8. J. Bogaerts and B. Dierickx, "Total dose effects on CMOS active pixel sensors," Proc. SPIE, vol. 3965, pp. 157-167, 2000.
9. H. Tian, B. Fowler, and A. El-Gamal, "Analysis of temporal noise in CMOS photodiode active pixel sensor," IEEE J. Solid-State Circuits, vol. 36, pp. 92-100, Jan. 2001.
10. H. Tian, X. Liu, S. H. Lim, S. Kleinfelder, and A. El-Gamal, "Active pixel sensors fabricated in a standard 0.18 μm CMOS technology," Proc. SPIE, vol. 4306, pp. 441-449, 2001.
11. P. Bhattacharya, Semiconductor Optoelectronic Devices. Englewood Cliffs, NJ: Prentice-Hall, 1993.
12. N. S. Kopeika, A System Engineering Approach to Imaging. Bellingham, WA: SPIE Press, 1998.
13. K. M. Kramer and W. N. Hitchon, Semiconductor Devices a Simulation Approach. Upper Saddle River, NJ: Prentice-Hall, 1997.
14. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.
15. T. Spirig, "Smart CCD/CMOS based image sensor with programmable real time temporal, and spatial convolution capabilities for application in machine vision and optical metrology," Ph.D. dissertation, ETH, Zürich, Switzerland, 1997.
16. J. P. Lavine, E. A. Trabka. B. C. Burkey, T. J. Tredwell, E. T. Nelson, and C. N. Anagnosyopoulos, "Steady-state photocarrier collection in silicon imaging devices," IEEE Trans. Electron Devices, vol. ED-30, pp. 1123-1134, Sept. 1983.
17. D. Kavaldjiev and Z. Ninkov, "Subpixel sensitivity map for a charge coupled device sensor," Opt. Eng., vol. 37, no. 3, pp. 948-954, Mar. 1998.
18. J. S. Lee and R. I. Hornsey, "Photoresponse of photodiode arrays for solid-state image sensors," J. Vac. Sci. Technol., vol. 18, no. 2, pp. 621-625, Mar. 2000.
19. I. Shcherback and O. Yadid-Pecht, "CMOS APS MTF modeling," IEEE Trans. Electron Devices, vol. 48, pp. 2710-2715, Dec. 2001.
20. J. Tandon, D. Roulston, and S. Chamberlain, "Reverse-bias characteristics of a P/sup+/-N-N/sup+/photodiode," Solid-State-Electron., vol. 15, pp. 669-85, June 1972.
21. R. Stern, L. Shing, and M. Blouke, "Quantum efficiency measurements and modeling of ion-implanted, laser-annealed charge-coupled devices: X-ray, extreme-ultraviolet, ultraviolet, and optical data," Appl. Opt., vol. 33, no. 13, pp. 2521-2533, May 1994.
22. B. Fowler, A. El-Gamal, D. Yang, and H. Tian, "A method for estimating quantum efficiency for CMOS image sensors," Proc. SPIE, vol. 3301, pp. 178-185, 1998.
23. P. B. Catrysse, X. Liu, and A. El-Gamal, "QE reduction due to pixel vignetting in CMOS image sensors," Proc. SPIE, vol. 3965, pp. 420-430, 2000.
24. O. Yadid-Pecht, "The geometrical modulation transfer function (MTF)-for different pixel active area shapes," Opt. Eng., vol. 39, no. 4, pp. 859-865, 2000.
25. D. Ramey and J. T. Boyd, "Computer simulation of optical crosstalk in linear imaging arrays," IEEE J. Quantum Electron., vol. QE-17, pp. 553-556, Apr. 1981.
26. H. Wong, "Technology and device scaling considerations for CMOS imagers," IEEE Trans. Electron Devices, vol. 43, pp. 2131-2142, Dec. 1996.
27. T. Lule, S. Benthien, H. Keller, F. Mutze, P. Rieve, K. Seibel, M. Sommer, and M. Bohm, "Sensitivity of CMOS based imagers and scaling perspectives," IEEE Trans. Electron Devices, vol. 47, pp. 2710-2122, Nov. 2000.