Modeling of direct tunneling for thin SiO2 film on n-type Si(1 0 0) by WKB method considering the quantum effect in the accumulation layer

Solid-State Electronics

Volumn 46, Issue 4, 2002, Pages 577-579

  Matsuo, Naoto ^a   Takami, Yoshinori ^a   Kitagawa, Yasunori ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

Direct tunneling; n type Si(1 0 0); Quantum effect; Thin SiO2 films; Wentzel, Kramers, Brillouin

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; GROUND STATE; QUANTUM THEORY; SILICA; THIN FILMS;

QUANTUM EFFECT;

SEMICONDUCTING FILMS;

EID: 0036533241     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00294-5     Document Type: Article

References (10)

1. Tunneling from an independent-particle point of view
2. 2
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5. 2 film
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8. Practical model for low electric field direct-tunneling current characteristics in nanometer-thick oxide films
9. Analytic model of direct tunneling current through nanometer-thick gate oxides
10. Two-carrier conduction in mos tunnel-oxides-theory