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Electronics Letters

Volumn 35, Issue 23, 1999, Pages 2016-2018

Practical model for low electric field direct-tunnelling current characteristics in nanometer-thick oxide films

(2) Nakatsuji, H a Omura, Y a

a KANSAI UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELDS; INTERFACES (MATERIALS); QUANTUM THEORY; SEMICONDUCTING SILICON; SILICA; THICK FILMS;

TUNNELLING BARRIER; TUNNELLING CURRENT;

ELECTRON TUNNELING;

EID: 0033318851 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:19991356 Document Type: Article

Times cited : (10)

References (10)

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