Modelling of direct tunnelling for thin SiO2 film on n-type Si(100) by Wentzel, Kramers, Brillouin method

Electronics Letters

Volumn 36, Issue 24, 2000, Pages 2046-2047

  Matsuo, N ^a   Takami, Y ^a   Kitagawa, Y ^a   Miyoshi, T ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; ELECTRON GAS; ELECTRON TUNNELING; FERMI LEVEL; INTERFACES (MATERIALS); MATHEMATICAL MODELS; OXIDATION; SILICA; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

DIRECT TUNNELLING; THIN SILICA FILMS; WENTZEL-KRAMERS-BRILLOUIN METHOD;

SEMICONDUCTING SILICON;

EID: 0034315005     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001403     Document Type: Article

References (4)

1. MATSUO, N., FUJIWARA, H., and MIYOSHI, T.: 'Approximate function of direct tunneling currents for thin dielectric film in the range of low voltage', Trans. IEICE C-II, 1997, 80, pp. 242-243
2. 2 film', Jpn. J. Appl. Phys., 1999, 38 pp. 3967-3970
3. SIMMONS, J.G., HSUEH, F.L., and FARAONE, L.: 'Two-carrier conduction in MOS tunnel-oxide-theory', Solid-State Electron., 1984, 27, pp. 1131-1139
4. 2', Appl. Phys. Lett., 1996, 69, pp. 2728-2730