ZnO/GaN heterointerfaces and ZnO films grown by plasma-assisted molecular beam epitaxy on (0001) GaN/Al2O3

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 4, 2000, Pages 2313-2321

  Hong, S K ^a   Ko, H J ^a   Chen, Y ^a   Hanada, T ^a   Yao, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 23044521335     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

1. C. Kligshirn, Phys. Status Solidi B 71, 547 (1975).
2. W. A. Harrison, Electronic Structure and the Properties of Solids (Freeman, San Francisco, 1980), p. 173, Table 7-3.
3. American Institute of Physics Handbook, 3rd ed., edited by D. E. Gray (McGraw-Hill, New York, 1972), pp. 9-19, Table 9b-1.
4. Properties of Wide Bandgap II-VI Semiconductors, edited by R. Bhargava (INSPEC, The Institute of Electrical Engineers, London, United Kingdom, 1997), pp. 137, Table 1.
5. D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 70, 2230 (1997).
6. Z. K. Tang, G. K. L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, Appl. Phys. Lett. 72, 3270 (1998).
7. D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 73, 1038 (1998).
8. Y. Chen et al., J. Cryst. Growth 181, 165 (1997).
9. Y. Chen, D. M. Bagnall, H. J. Ko, K. T. Park, K. Hiraga, Z. Zhu, and T. Yao, J. Appl. Phys. 84, 3912 (1998).
10. Y. Chen, S. K. Hong, H. J. Ko, M. Nakajima, T. Yao, and Y. Segawa, Appl. Phys. Lett. 76, 245 (2000).
11. A. Ohtake, S. Miwa, L. H. Kuo, T. Yasuda, K. Kimura, C. Jin, and T. Yao, J. Cryst. Growth 184/185, 163 (1998).
12. A. Franciosi and C. G. Van de Walle, Surf. Sci. Rep. 25, 1 (1996).
13. L. H. Kuo, K. Kimura, T. Yasuda, S. Miwa, C. G. Jin, K. Tanaka, and T. Yao, Appl. Phys. Lett. 68, 2413 (1996).
14. L. H. Kuo, K. Kimura, S. Miwa, T. Yasuda, and T. Yao, Appl. Phys. Lett. 69, 1408 (1996).