Oxygen-related defects and their annealing behavior in low-dose Separation-by-IMplanted OXygen (SIMOX) wafers studied by slow positron beams

Applied Surface Science

Volumn 194, Issue 1-4, 2002, Pages 112-115

  Chen, Z Q ^a   Uedono, Akira ^a   Ogura, Atsushi ^b   Ono, Haruhiko ^b   Suzuki, Ryoichi ^c   Ohdaira, Toshiyuki ^c   Mikado, Tomohisa ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NEC CORPORATION   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Positron beam; SIMOX; Vacancy oxygen complex

Indexed keywords

ANNEALING; ION IMPLANTATION; OXYGEN; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SEPARATION; SILICON WAFERS; SUBSTRATES;

VACANCY-OXYGEN COMPLEX;

CRYSTAL DEFECTS;

EID: 0037150996     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00098-3     Document Type: Conference Paper

References (12)