Microstructural evolution of oxygen implanted silicon during annealing processes

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 311-316

  Ishimaru, M ^a,b   Tsunemori, T ^a   Harada, S ^a   Arita, M ^a   Motooka, T ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

EELS; Silicon on insulator structure; TEM; XPS

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; ELECTRON ENERGY LOSS SPECTROSCOPY; INTERFACIAL ENERGY; ION IMPLANTATION; PRECIPITATION (CHEMICAL); SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SEPARATION BY IMPLANTED OXYGEN (SIMOX);

SILICON WAFERS;

EID: 0033513694     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00773-3     Document Type: Article

References (8)

1. K. Izumi, M. Doken, H. Ariyoshi, Electron. Lett. 14 (1978) 593.
2. S. Nakashima, K. Izumi, J. Mat. Res. 8 (1993) 523.
3. S. Bagchi, S.J. Krause, P. Roitman, Appl. Phys. Lett. 71 (1997) 2136.
4. S. Reiss, K.H. Heinig, Nucl. Instr. and Meth. B 112 (1996) 223.
5. S. Visitserngtrakul, S.J. Krause, B.F. Cordts, J. Appl. Phys. 69 (1991) 1784.
6. J.P. Biersack, L.G. Haggmark, Nucl. Instr. and Meth. 174 (1980) 257.
7. E. Hensel, K. Wollschläger, D. Schulze, U. Kreissig, W. Skorupa, J. Finster, Surf. Interface Anal. 7 (1985) 207.
8. H. Ono, T. Ikarashi, A. Ogura, Appl. Phys. Lett. 72 (1998) 2853.