Calculated gain and threshold current density for interconduction-subband transition in Si triple-quantum-well-structures

Microwave and Optical Technology Letters

Volumn 35, Issue 6, 2002, Pages 470-475

  Ghosh, Sumitra ^a   Mukhopadhyay, Bratati ^a   Basu, P K ^a  

^a UNIVERSITY OF CALCUTTA   (India)

Author keywords

Intersubband lasers; Mid infrared emitter; Quantum cascade lasers; Si SiGe quantum wells

Indexed keywords

CALCULATIONS; CURRENT DENSITY; ELECTRON TUNNELING; HETEROJUNCTIONS; LIGHT SCATTERING; NUMERICAL METHODS; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

INTERSUBBAND LASER; MID INFRARED EMITTER; QUANTUM CASCADE LASER; SILICON QUANTUM WELL; THRESHOLD CURRENT DENSITY; TRIPLE WELL STRUCTURE;

QUANTUM WELL LASERS;

EID: 0037147368     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.10641     Document Type: Article

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