Gain measurements on GaAs-based quantum cascade lasers using a two-section cavity technique

IEEE Journal of Quantum Electronics

Volumn 36, Issue 6, 2000, Pages 736-741

  Barbieri, Stefano ^b,c,e,f,g,h   Sirtori, Carlo ^a,b,i,j   Page, Hideaky ^b,k,l   Beck, Mattias ^d,j,m,n,o   Faist, Jérôme ^a,d,j,n   Nagle, Julien ^b  

^a IEEE   (United States)

^b THALES   (France)

^c INFM   (Italy)

^d UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^e UNIVERSITY OF PISA   (Italy)

^f SCUOLA NORMALE SUPERIORE   (Italy)

^g UNIVERSITY OF FLORENCE   (Italy)

^h Institute of Physics   (Italy)

ⁱ UNIVERSITY OF MILAN   (Italy)

^j LUCENT TECHNOLOGIES   (United States)

^k LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^l UNIVERSITY OF SURREY   (United Kingdom)

^m ETH ZURICH   (Switzerland)

ⁿ EPFL   (Switzerland)

^o Alpes Lasers SA   (Switzerland)

more..

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; INTERSUBBAND TRANSITIONS; OPTICAL CONFINEMENT; QUANTUM CASCADE LASERS; TWO SECTION CAVITY TECHNIQUE; WAVEGUIDE LOSSES;

CURRENT DENSITY; ELECTRIC FIELDS; ELECTRON TUNNELING; GAIN MEASUREMENT; MOLECULAR BEAM EPITAXY; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS;

QUANTUM WELL LASERS;

EID: 0033726648     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.845731     Document Type: Article

References (20)

1. 1-x As quantum cascade lasers," Appl Phys. Lett., vol. 73, pp. 3486-3488, 1998.
2. 1-xAs," IEE Photon. Technol. Lett., vol. 11, pp. 1090-1093, 1999.
3. C. Sirtori, P. Kruck, S. Barbieri, H. Page, P. Collot, J. Nagle, M. Beck, J. Faist, and O. Oesterle, "Low loss Al free waveguides for unipolar semiconductor lasers," Appl. Phys. Lett., vol. 75, pp. 3911-3913, 1999.
4. H. Page, P. Kruck, S. Barbieri, C. Sirtori, M. Stellmacher, and J. Nagle, "High peak power (1.1 W) AlGaAs quantum cascade laser," Electron. Lett., vol. 35, pp. 1848-1850, 1999.
5. S. Gianordoli, L. Hvozdara, G. Strasser, W. Schrenk, K. Unterrainer, and E. Gornik, "GaAs/AlGaAs-based microcylinder lasers emitting at 10 μm," Appl. Phys. Lett., vol. 75, pp. 1045-1047, 1999.
6. J. Faist, A. Tredicucci, F. Capasso, C. Sirtori, D. L. Sivco, J. N. Baillargeon, A. L. Hutchinson, and A. Y. Cho, "High-power continous-wave quantum cascade lasers," IEEE J. Quantum Electron., vol. 34, pp. 336-343, 1998.
7. A. Tredicucci, F. Capasso, C. Gmachl, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho, "High performance interminiband quantum cascade lasers with graded superlattice," Appl. Phys. Lett., vol. 73, pp. 2101-2103, 1998.
8. C. Sirtori, F. Capasso, J. Faist, A. L. Hutchinson, D. L. Sivco, and A. Y. Cho, "Resonant tunneling in quantum cascade lasers," IEEE J. Quantum Electron., vol. 34, pp. 1722-1729, 1998.
9. C. Sirtori, J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho, "Pulsed and continuous-wave operation of long wavelength infrared (λ = 9.3 μm) quantum cascade lasers," IEEE J. Quantum Electron., vol. 34, pp. 89-93, 1998.
10. L. R. Wilson, P. T. Keightley, J. W. Cockburn, J. P. Duck, M. S. Skolnick, J. C. Clark, G. Hill, M. Moran, and R. Grey, "Spectroscopic determination of the electronic distribution in a quantum cascade structure," Appl. Phys. Lett., vol. 75, pp. 2079-2081, 1999.
11. B. W. Hakki and T. L. Paoli, "Gain spectra in GaAs double-heterostructure injection lasers," J. Appl. Phys., vol. 46, pp. 1299-1306, 1975.
12. S. D. McDougall and C. N. Ironside, "Measurements of reverse and forward bias absorption and gain spectra in semiconductor laser material," Electron. Lett., vol. 31, pp. 2179-2181, 1995.
13. J. Faist, F. Capasso, C. Sirtori, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho, "Laser action by tuning the oscillator strength," Nature, vol. 387, pp. 777-782, 1997.
14. Handbook of Optical Constants of Solids, E. D. Palik, Ed., Academic, New York, NY, 1985.
15. C. Sirtori, J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho, "Mid-infrared (8.5 μm) semiconductor lasers operating at room temperature," IEEE Photon. Technol. Lett., vol. 9, pp. 294-296, 1997.
16. _, "Long wavelenght infrared (λ = 11 μm) quantum cascade lasers," Appl. Phys. Lett., vol. 69, pp. 2810-2812, 1996.
17. J. Faist, F. Capasso, C. Sirtori, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho, "Vertical transition quantum cascade laser with Bragg confined excited state," Appl. Phys. Lett., vol. 66, pp. 538-540, 1995.
18. _, "Continous wave operation of vertical transition quantum cascade laser above 80 K," Appl. Phys. Lett., vol. 67, pp. 3057-3059, 1995.
19. J. Faist, F. Capasso, C. Sirtori, D. L. Sivco, J. N. Baillargeon, A. L. Hutchinson, S. G. Chu, and A. Y. Cho, "High power mid-infrared (λ = 5 μm) quantum cascade lasers operating above room temperature," Appl. Phys. Lett., vol. 68, pp. 3680-3682, 1996.
20. J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, S. G. Chu, and A. Y. Cho, "Short wavelength (λ = 3.4 μm) quantum cascade lasers based on strained compensated InGaAs/AlInAs," Appl. Phys. Lett., vol. 72, pp. 680-682, 1998.