Progress toward silicon-based intersubband lasers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1525-1528

  Soref, Richard A ^a   Friedman, Lionel ^a   Lew Yan Voon, L C ^b   Ram Mohan, L R ^b   Sun, Gregory ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b Worcester Polytechnic Institute   (United States)

^c UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001558739     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589979     Document Type: Article

References (14)

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13. T. Pearsall, in Properties of Strained and Relaxed SiGe, edited by E. Kasper (IEE, 1995).
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