Theory of the spectral line shape and gain in quantum wells with intersubband transitions

Applied Physics Letters

Volumn 68, Issue 16, 1996, Pages 2171-2173

  Gelmont, Boris ^a   Gorfinkel, Vera ^b   Luryi, Serge ^b  

^a University of Virginia   (United States)

^b Stony Brook University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON SCATTERING; ELECTRON TRANSITIONS; HOT CARRIERS; MATHEMATICAL MODELS; MATRIX ALGEBRA; PHONONS; SPECTRUM ANALYSIS; THERMAL EFFECTS;

DENSITY MATRIX EQUATIONS; ELECTRON TEMPERATURE; INTERSUBBAND TRANSITIONS; OPTICAL GAIN; POPULATION INVERSION; SPECTRAL LINE SHAPE; SUBBAND NONPARABOLICITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030128985     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116002     Document Type: Article

References (11)

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5. V. B. Gorfinkel, S. Luryi, and B. Gelmont (unpublished).
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11. e throughout the entire period (∼400 Å). A very interesting situation arises in the opposite limit of low carrier concentrations, where the rate of electron-electron collisions is too low to establish Maxwellian distribution functions in the two subbands. In this limit (Ref. 5), the existence of a positive gain persists to concentrations far from an overall inversion and does not rely on the nonparabolicity.