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Surface Science

Volumn 504, Issue , 2002, Pages 101-107

First principles total energy calculations of the Al induced Si(0 0 1)-(3 × 4) reconstruction

(2) Cocoletzi, Gregorio H a Takeuchi, Noboru b,c

a BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA (Mexico)

b UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO (Mexico)

c CeCiMaC UNAM (United States)

Author keywords

Ab initio quantum chemical methods and calculations; Aluminum; Silicon; Surface relaxation and reconstruction

Indexed keywords

ALUMINUM; BINDING ENERGY; SCANNING TUNNELING MICROSCOPY; STRUCTURAL OPTIMIZATION; SURFACE STRUCTURE; THERMAL EFFECTS;

SURFACE RELAXATION;

SILICON;

EID: 0037140012 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01915-X Document Type: Article

Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.