Si(100)4 × 3-In surface phase: Identification of silicon substrate atom reconstruction

Surface Science

Volumn 391, Issue 1-3, 1997, Pages

  Zotov, A V ^a,b,c   Saranin, A A ^a,c,d   Ignatovich, K V ^a   Lifshits, V G ^a   Katayama, M ^c   Oura, K ^c  

^a INSTITUTE OF AUTOMATION AND CONTROL PROCESSES   (Russian Federation)

^b VLADIVOSTOK STATE UNIVERSITY OF ECONOMICS AND SERVICE   (Russian Federation)

^c OSAKA UNIVERSITY   (Japan)

^d FAR EASTERN FEDERAL UNIVERSITY   (Russian Federation)

Author keywords

Atom solid interactions; Auger electron spectroscopy (AES); Indium; Low energy electron diffraction (LEED); Silicon; Surface structure, morphology, roughness, and topography

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; HYDROGEN; LOW ENERGY ELECTRON DIFFRACTION; MONOLAYERS; MORPHOLOGY; SEMICONDUCTING INDIUM; SUBSTRATES; SURFACE ROUGHNESS; SURFACE TREATMENT;

ATOM SOLIDS INTERACTIONS; SURFACE RECONSTRUCTION; SURFACE TOPOGRAPHY;

SEMICONDUCTING SILICON;

EID: 0031268882     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00645-6     Document Type: Article

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