Self-assembled growth of ordered Ge nanoclusters on the Si(111)-(7×7) surface

Surface Science

Volumn 497, Issue 1-3, 2002, Pages

  Zhang, Y P ^a   Yan, L ^a   Xie, S S ^a   Pang, S J ^a   Gao, H J ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

Germanium; Scanning tunneling microscopy; Self assembly; Silicon; Solid phase epitaxy

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

NANOCLUSTERS; SOLID PHASE EPITAXY;

NANOSTRUCTURED MATERIALS;

EID: 0037137923     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)01649-1     Document Type: Article

References (16)