Experimental investigation of 4H-SiC bulk crystal growth

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 17-20

  Chourou, K ^a   Anikin, M ^a   Bluet, J M ^a   Lauer, V ^b   Guillot, G ^b   Camassel, J ^c   Juillaguet, S ^c   Chaix, O ^a   Pons, M ^d   Madar, R ^a  

^a CNRS   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c UNIV MONTPELLIER   (France)

^d UNIV GRENOBLE ALPES   (France)

Author keywords

Micro Raman; Polytypism; Sublimation Growth; Wide Band Gap Semiconductors

Indexed keywords

CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; ENERGY GAP; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SILICON CARBIDE; SINGLE CRYSTALS; TITANIUM; VANADIUM;

MODIFIED LELY METHOD (MLM); POLYTYPES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031698872     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.17     Document Type: Article

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