X-ray section topographic investigation of the growth process of SiC crystals

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 29-32

  Milita, S ^a   Madar, R ^b   Baruchel, J ^a   Mazuelas, A ^a  

^a EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^b CNRS   (France)

Author keywords

Crystal Growth; X Ray Section Topography

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; SILICON CARBIDE; SYNCHROTRON RADIATION; X RAY CRYSTALLOGRAPHY;

X RAY SECTION TOPOGRAPHY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 3743064830     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.29     Document Type: Article

References (4)

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3. M. Anikin and R. Madar, Proc. E-MRS Spring Meeting (1996)
4. C. Medrano, P. Rejmankova, M. Ohler and I. Matsouli, II Nuovo Cimento 19 D, (1997)