Growth of nitride crystals, BN, AlN and GaN by using a Na flux

Diamond and Related Materials

Volumn 9, Issue 3, 2000, Pages 512-515

  Yano, M ^a   Okamoto, M ^a   Yap, Y K ^a   Yoshimura, M ^a   Mori, Y ^a   Sasaki, T ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CRYSTAL GROWTH; CRYSTAL ORIENTATION; GRAIN SIZE AND SHAPE; NUCLEATION; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SODIUM;

ALUMINUM NITRIDE; BORON NITRIDE; GALLIUM NITRIDE;

NITRIDES;

EID: 0033729799     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(99)00308-8     Document Type: Article

References (15)

1. S. Nakamura, M. Senoh, N. Iwasa, S. Nagasawa, T. Yamada, T. Mukai, Jpn. J. Appl. Phys. 34 (1995) L1332.
2. H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, Appl. Phys. Lett. 48 (1986) 353.
3. S. Nakamura, Jpn. J. Appl. Phys. 30 (1991) L1705.
4. J.A. Van Vechten, Phys. Rev. B 7 (1973) 1479.
5. J. Karpinski, J. Jun, S. Porowski, J. Cryst. Growth 66 (1984) 1.
6. T. Ishii, T. Sato, J. Cryst. Growth 61 (1983) 689.
7. G.A. Slack, T.F. McNelly, J. Cryst. Growth 42 (1977) 560.
8. T. Ishii, T. Sato, M. Iwata, Mineral. J. 8 (1975) 1.
9. C.M. Drum, J. Appl. Phys. 36 (1965) 816.
10. K.M. Taylor, C. Lenie, J. Electrochem. Soc. 107 (1960) 308.
11. C.O. Dugger, Mater. Res. Bull. 9 (1974) 331.
12. H. Yamane, M. Shimada, S.J. Clarke, F.J. DiSalvo, Chem. Mater. 9 (1997) 413.
13. H. Yamane, M. Shimada, T. Sekiguchi, F.J. DiSalvo, J. Cryst. Growth 186 (1998) 8.
14. Y. Mori, M. Yano, M. Okamoto, T. Sasaki, H. Yamane, Bull. Solid State Phys. Appl. 4 (5) (1998) 198.
15. M. Yano, M. Okamoto, Y.K. Yap, M. Yoshimura, Y. Mori, T. Sasaki, Jpn. J. Appl. Phys. 38 (1999) 1121.