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Volumn 53, Issue 11, 1996, Pages 7267-7274

Investigation of the spatial distribution of dangling bonds in light-soaked hydrogenated amorphous silicon

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EID: 0000199937     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.7267     Document Type: Article
Times cited : (13)

References (19)
  • 16
    • 0022660824 scopus 로고
    • The cutoff photon energy of 1.65 eV is chosen because (a) a standard a-Si:H sample has an optical gap of about 1.7 eV and (b) photons below the optical gap are inefficient for dangling-bond generation [but, see, J. F. Tian, D. S. Jiang, B. R. Zheng, L. Huang and G. L. Kong, Solid State Commun. 57, 543 (1986)]. Also, the assumption of an energy-independent quantum efficiency is reasonable only for photon energies greater than the optical gap.
    • (1986) Solid State Commun. , vol.57 , pp. 543
    • Tian, J.1    Jiang, D.2    Zheng, B.3    Huang, L.4    Kong, G.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.