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Volumn 79, Issue 19, 2001, Pages 3080-3082

Fingerprints of two distinct defects causing light-induced photoconductivity degradation in hydrogenated amorphous silicon

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Indexed keywords


EID: 0000048848     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1413719     Document Type: Article
Times cited : (13)

References (20)
  • 9
    • 0042255142 scopus 로고    scopus 로고
    • note
    • a.
  • 11
    • 0031371608 scopus 로고    scopus 로고
    • A similar anomalous increase in sub-band-gap absorption for hv = 0.95-1.11 eV, was previously found at 4.2 K and reported by P. Stradins and H. Fritzsche, Mater. Res. Soc. Symp. Proc. 467, 85 (1997).
    • (1997) Mater. Res. Soc. Symp. Proc. , vol.467 , pp. 85
    • Stradins, P.1    Fritzsche, H.2
  • 14
    • 21544435761 scopus 로고
    • H. Dersch, J. Stuke, and J. Beichler, Appl. Phys. Lett. 38, 456 (1981) find little change in ESR signal during an anneal at 120 °C for 30 min. We find large changes in pr center density during similar treatments.
    • (1981) Appl. Phys. Lett. , vol.38 , pp. 456
    • Dersch, H.1    Stuke, J.2    Beichler, J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.