Photoinduced structural change and defect creation in hydrogenated amorphous silicon

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 267-271

  Shimizu, K ^a   Tabuchi, T ^a   Iida, M ^a   Okamoto, H ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Defects; Hydrogenated amorphous silicon; Internal stress; Metastability; Polarized electroabsorption; Structural change; Structure

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; CHEMICAL BONDS; CRYSTAL DEFECTS; DEGRADATION; HYDROGENATION; PHOTOCHEMICAL REACTIONS; POLARIZATION; RESIDUAL STRESSES; SEMICONDUCTING SILICON; STRESS ANALYSIS;

METASTABILITY;

SEMICONDUCTING FILMS;

EID: 0032068569     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00173-2     Document Type: Article

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