Carrier generation in highly oriented WO 3 films by proton or helium implantation

Journal of Applied Physics

Volumn 92, Issue 4, 2002, Pages 2017-2022

  Miyakawa, M ^a   Ueda, K ^a   Hosono, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER ELECTRONS; CARRIER GENERATION; CHEMICAL EFFECT; EPITAXIALLY GROWN; GRAIN BOUNDARY EFFECTS; HALL VOLTAGE; HELIUM IMPLANTATION; HIGHLY ORIENTED FILMS; ORDERS OF MAGNITUDE; ORIENTED FILMS; PHYSICAL EFFECTS; POLYCRYSTALLINE FILM; RF SPUTTERING METHOD; SCATTERING CENTERS; VACANCY FORMATION; X-RAY DIFFRACTION MEASUREMENTS;

GRAIN BOUNDARIES; PULSED LASER DEPOSITION; SAPPHIRE; X RAY DIFFRACTION;

SUBSTRATES;

EID: 0037103580     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1496120     Document Type: Article

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