Dual function of thin MoO3 and WO3 films as negative and positive resists for focused ion beam lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 6 SUPPL. A, 1996, Pages 3665-3669

  Hashimoto, Masahiro ^a   Watanuki, Shinichi ^a   Koshida, Nobuyoshi ^a   Komuro, Masanori ^b   Atoda, Nobufumi ^c  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c SORTEC   (Japan)

Author keywords

Fine wiring; Focused ion beam; Inorganic resist; MoO3; Negative resist; Positive resist; Thin films; Wo3

Indexed keywords

COMPOSITION; FILM PREPARATION; ION BEAM LITHOGRAPHY; MOLYBDENUM COMPOUNDS; PHASE TRANSITIONS; PHOTORESISTS; TUNGSTEN COMPOUNDS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

FINE WIRING; FOCUSED ION BEAM LITHOGRAPHY; INORGANIC RESISTS; MOLYBDENUM OXIDE; NEGATIVE RESIST; POSITIVE RESIST; TUNGSTEN OXIDE;

THIN FILMS;

EID: 0030166963     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3665     Document Type: Article

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