Low threshold current density operation of 1.16 μm highly strained GaInAs/GaAs vertical cavity surface emitting lasers on (100) GaAs substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 5 B, 2002, Pages

  Kondo, Takashi ^a   Arai, Masakazu ^a   Azuchi, Munechika ^a   Uchida, Takeshi ^a   Matsutani, Akihiro ^a   Miyamoto, Tomoyuki ^a   Koyama, Fumio ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

(100) GaAs substrate; GaInAs GaAs; Highly strained; VCSEL

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; LOW TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

QUANTUM WELL LASERS;

EID: 0037095567     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l562     Document Type: Article

References (18)