Injection lasers with vertically aligned InP/GaInP quantum dots: Dependence of the threshold current on temperature and dot size

Applied Physics Letters

Volumn 73, Issue 25, 1998, Pages 3730-3732

  Riedl, T ^a   Fehrenbacher, E ^a   Hangleiter, A ^a   Zundel, M K ^b   Eberl, K ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT DENSITY; ELECTROLUMINESCENCE; ENERGY GAP; LIGHT EMISSION; MATHEMATICAL MODELS; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE;

DOT TRANSMISSION ENERGY; ELECTRICAL PULSES; OPTICAL MULTICHANNEL ANALYZER; THRESHOLD CURRENT;

INJECTION LASERS;

EID: 0032556602     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122877     Document Type: Article

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