Growth of high-quality buried Y- And (Y, Nd)-silicide layers prepared by channelled ion implantation

Journal of Crystal Growth

Volumn 194, Issue 2, 1998, Pages 189-194

  Jin, S ^a   Bender, H ^a   Wu, M F ^b,c   Vantomme, A ^b   Hogg, S ^b   Pattyn, H ^b   Langouche, G ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c PEKING UNIVERSITY   (China)

Author keywords

Epitaxial growth; Ion implantation; Transmission electron microscopy

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; ION IMPLANTATION; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; YTTRIUM COMPOUNDS;

YTTRIUM SILICIDE;

EPITAXIAL GROWTH;

EID: 0032476404     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00715-5     Document Type: Article

References (20)

1. K.N. Tu, R.D. Thompson, B.Y. Tsaur, Appl. Phys. Lett. 38 (1981) 626.
2. J.A. Knapp, S.T. Picraux, Appl. Phys. Lett. 48 (1986) 466.
3. K. Maex, M. Van Rossum, EMIS Data Rev. Ser. 14 (1995).
4. P.L. Janega, J. McCaffrey, D. Landheer, Appl. Phys. Lett. 55 (1989) 1415.
5. H. Norde, J. deSousa Pires, F. d'Heurle, F. Pesavento, S. Petersson, P.A. Tove, Appl. Phys. Lett. 38 (1981) 865.
6. M.P. Siegal, F.H. Kaatz, W.R. Graham, J.J. Santiago, J. Van der Spiegel, J. Appl. Phys. 66 (1989) 2999.
7. T.L. Lee, L.J. Chen, F.R. Chen, J. Appl. Phys. 71 (1992) 3307.
8. S. Jin, J.H. Lin, L.J. Chen, W.D. Shi, Z. Zhang, Nucl. Instr. Meth. B 96 (1995) 347.
9. R. Baptist, S. Ferrer, G. Grenet, H.C. Ponn, Phys. Rev. Lett. 64 (1990) 311.
10. S. Mantl, Mater. Sci. Rep. 8 (1992) 1.
11. C.M. Osburn, in: R.B. Fair (Ed.), Rapid Thermal Processing, Academic Press, Boston, 1993.
12. A.E. White, K.T. Short, R.C. Dynes, J.P. Garno, J.M. Gibson, Appl. Phys. Lett. 50 (1987) 95.
13. M.F. Wu, J. De Wachter, A.M. Van Bavel, H. Pattyn, G. Langouche, J. Vanhellemont, H. Bender, K. Temst, B. Wuyts, Y. Bruynseraede, J. Appl. Phys. 75 (1994) 1201.
14. M.F. Wu, A. Vantomme, J. De Wachter, S. Degroote, H. Pattyn, G. Langouche, H. Bender, J. Appl. Phys. 79 (1996) 6920.
15. A.E. White, K.T. Short, R.C. Dynes, R. Hull, J.M. Vanderberg, Nucl. Instr. Meth. B 39 (1989) 253.
16. M.F. Wu, A. Vantomme, H. Pattyn, G. Langouche, H. Bender, Appl. Phys. Lett. 68 (1996) 3260.
17. M.F. Wu, A. Vantomme, H. Pattyn, G. Langouche, H. Bender, Mater. Res. Soc. Symp. Proc. 427 (1996) 535.
18. H. von Känel, Mater. Sci. Rep. (1992) 193.
19. C. Jaussaud, J. Margall, J. Stoemenos, M. Bruel, Mater. Res. Soc. Symp. Proc. 107 (1988) 17.
20. H. Bender, M.F. Wu, A. Vantomme, H. Pattyn, G. Langouche, Mater. Res. Soc. Symp. Proc. 402 (1996) 499.