High quality GdSi1.7 layers formed by high dose channelled implantation

Materials Research Society Symposium - Proceedings

Volumn 427, Issue , 1996, Pages 535-540

  Wu, M F ^a   Vantomme, A ^a   Pattyn, H ^a   Langouche, G ^a   Bender, H ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; ION BEAMS; PHASE TRANSITIONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

HIGH DOSE CHANNELED IMPLANTATION; THIN GADOLINIUM SILICIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030387211     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)